Part Number Hot Search : 
ICX278AL HPR101V 2SK3469 R1060 28F320 2SC60 PCF80 ON1137
Product Description
Full Text Search
 

To Download 2SC271207 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2712 document number: bl/ssstc021 www.galaxycn.com rev.a 1 features z low noise nf=1db (typ.),10 db(max). z complementary to 2sa1162. z high voltage and high current. z high h fe linearity. applications z audio frequency general purpose amplifier app lications. sot-23 ordering information type no. marking package code 2sc2712 lo ? /ly ? /lg ? /ll ? sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector dissipation 150 mw t j, t stg junction and storage temperature -55~125 pb lead-free
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2712 document number: bl/ssstc021 www.galaxycn.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.1 0.25 v transition frequency f t v ce =10v, i c = 1ma 80 mhz output capacitance c ob v cb =10v, i e =0,f=1khz 2.0 3.5 pf noise figure nf v ce =6v,i c =0.1ma,f=1khz 1.0 10 db classification of h fe(1) rank o y gr bl range 70-140 120-240 200-400 350-700 marking lo ly lg ll
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2712 document number: bl/ssstc021 www.galaxycn.com rev.a 3 typical characteristics @ ta=25 unless otherwise specified
bl galaxy electrical production specification silicon epitaxial planar transistor 2sc2712 document number: bl/ssstc021 www.galaxycn.com rev.a 4 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm device package shipping 2sc2712 sot-23 3000/tape&reel


▲Up To Search▲   

 
Price & Availability of 2SC271207

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X